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mrf7s38010hr3 MRF7S38010HSR3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for wimax base station a pplications with frequencies up to 3800 mhz. suitable for wimax, wibro, bwa, and ofdm multicarrier class ab and class c amplifier applications. ? typical wimax performance: v dd = 30 volts, i dq = 160 ma, p out = 2 watts avg., f = 3400 - 3600 mhz, 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 15 db drain efficiency ? 17% device output signal par ? 8.5 db @ 0.01% probability on ccdf acpr @ 5.25 mhz offset ? - 49 dbc in 0.5 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 3500 mhz, 10 watts cw peak tuned output power ? p out @ 1 db compression point 10 watts cw features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v ds - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 10 w cw case temperature 77 c, 2 w cw r jc 2.05 2.24 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf7s38010h rev. 0, 8/2007 freescale semiconductor technical data mrf7s38010hr3 MRF7S38010HSR3 3400 - 3600 mhz, 2 w avg., 30 v wimax lateral n - channel rf power mosfets case 465i - 02, style 1 ni - 400 - 240 mrf7s38010hr3 case 465j - 02, style 1 ni - 400s - 240 MRF7S38010HSR3 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 33.5 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 30 vdc, i d = 160 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 335 madc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.13 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 68.5 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 50.6 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 160 ma, p out = 2 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, 802.16d, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 0.5 mhz channel bandwidth @ 5.25 mhz offset. power gain g ps 13 15 17 db drain efficiency d 15 17 30 % output peak - to - average ratio @ 0.01% probability on ccdf par 8 8.5 ? db adjacent channel power ratio acpr ? -49 -46 dbc input return loss irl ? -12 -6 db 1. part internally matched both on input and output. (continued)
mrf7s38010hr3 MRF7S38010HSR3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances ofdm signal (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 160 ma, p out = 2 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, ofdm single - carrier, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. mask system type g @ p out = 2 w avg. point b at 3.5 mhz offset point c at 5 mhz offset point d at 7.4 mhz offset point e at 14 mhz offset point f at 17.5 mhz offset mask ? ? ? ? ? -26 -38 -43 -60 -60 ? ? ? ? ? dbc relative constellation error @ p out = 2 w avg. (1) rce ? -33 ? db error vector magnitude (1) (typical evm performance @ p out = 2 w avg. with ofdm 802.16d signal call) evm ? 2.3 ? % rms typical performances (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 160 ma, 3400 - 3600 mhz bandwidth video bandwidth @ 12 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 20 ? mhz gain flatness in 200 mhz bandwidth @ p out = 2 w avg. g f ? 1.04 ? db average deviation from linear phase in 200 mhz bandwidth @ p out = 10 w cw ? 2.22 ? average group delay @ p out = 10 w cw, f = 3500 mhz delay ? 1.88 ? ns part - to - part insertion phase variation @ p out = 10 w cw, f = 3500 mhz, six sigma window ? ? 25.9 ? gain variation over temperature (-30 c to +85 c) g ? 0.025 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.246 ? dbm/ c 1. rle = 20log(evm/100)
4 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 figure 1. mrf7s38010hr3(hsr3) test circuit schematic z11 0.032 x 0.166 microstrip z12 0.124 x 0.538 microstrip z13 0.099 x 0.341 microstrip z14 0.220 x 0.166 microstrip z15 0.063 x 0.240 microstrip z16 0.085 x 0.340 microstrip z17 0.037 x 0.340 x 0.257 taper z18 0.637 x 0.084 microstrip pcb cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1, z19 0.750 x 0.084 microstrip z2 0.596 x 0.084 microstrip z3 0.288 x 0.110 microstrip z4 0.450 x 0.084 microstrip z5 0.067 x 0.367 microstrip z6 0.083 x 0.307 microstrip z7 0.830 x 0.058 microstrip z8 0.567 x 0.128 microstrip z9 0.116 x 0.367 microstrip z10 0.064 x 0.307 microstrip v bias v supply rf output rf input dut c3 c5 c4 z1 z2 z3 z4 c1 c2 z7 z9 z10 z11 z8 b1 + z5 z6 z12 z13 z19 z14 z15 z16 z17 z18 c6 + c7 + table 5. mrf7s38010hr3(hsr3) test circuit com ponent designations and values part description part number manufacturer b1 95 , 100 mhz long ferrite bead, surface mount 2743021447 fair - rite c1 2.2 pf chip capacitor atc100b2r2jt500xt atc c2 2.7 pf chip capacitor atc100b2r7bt500xt atc c3, c4 0.8 pf chip capacitors atc100b0r8bt500xt atc c5, c6, c7 22 f, 35 v tantalum capacitors t491x226k035at kemet
mrf7s38010hr3 MRF7S38010HSR3 5 rf device data freescale semiconductor figure 2. mrf7s38010hr3(hsr3) test circuit component layout b1 cut out area c5 c3 c4 c1 c2 c6 c7 mrf7s38010h/hs rev. 1
6 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 typical characteristics irl, input return loss (db) acpr (dbc) 3400 f, frequency (mhz) figure 3. wimax broadband performance @ p out = 2 watts avg. ?20 0 ?5 ?10 ?15 12 17 16.5 16 ?54 20 19 18 17 ?49 ?50 ?51 ?52 d , drain efficiency (%) g ps , power gain (db) 15.5 15 14.5 14 13.5 13 12.5 3425 3450 3475 3500 3600 16 ?53 ?25 irl g ps d v dd = 30 vdc, p out = 2 w (avg.), i dq = 160 ma 802.16d, 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf 3525 3550 3575 acpr ?l acpr?u irl, input return loss (db) acpr (dbc) f, frequency (mhz) figure 4. wimax broadband performance @ p out = 4 watts avg. ?20 0 ?5 ?10 ?15 12 17 16.5 16 ?45 26 25 24 23 ?40 ?41 ?42 ?43 d , drain efficiency (%) g ps , power gain (db) 15.5 15 14.5 14 13.5 13 12.5 22 ?44 ?25 irl g ps d v dd = 30 vdc, p out = 4 w (avg.), i dq = 160 ma 802.16d, 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf acpr ?l acpr?u figure 5. two - tone power gain versus output power 10 19 1 i dq = 240 ma p out , output power (watts) pep 200 ma 14 13 11 10 50 g ps , power gain (db) 16 v dd = 30 vdc, i dq = 160 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing figure 6. third order intermodulation distortion versus output power i dq = 80 ma p out , output power (watts) pep 120 ma 10 ?20 ?30 ?40 ?50 1 intermodulation distortion (dbc) imd, third order 50 ?10 v dd = 30 vdc, i dq = 160 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing 12 15 17 18 160 ma 120 ma 80 ma 240 ma 200 ma 160 ma 3400 3425 3450 3475 3500 3600 3525 3550 3575
mrf7s38010hr3 MRF7S38010HSR3 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 ?40 ?50 10 ?30 ?20 ?60 7th order 5th order 3rd order 50 figure 8. intermodulation distortion products versus tone spacing two ?tone spacing (mhz) 10 ?70 im3 ?u ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3 ?l im5 ?u im5 ?l im7 ?l im7 ?u ?15 ?50 ?55 ?60 ?45 figure 9. wimax, acpr, power gain and drain efficiency versus output power 0 p out , output power (watts) avg. wimax 45 35 30 10 20 20 acpr d , drain efficiency (%), g ps , power gain (db) acpr (dbc) d 40 25 15 g ps v dd = 30 vdc, i dq = 160 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing v dd = 30 vdc, p out = 12 w (pep), i dq = 160 ma two ?tone measurements (f1 + f2)/2 = center frequency of 3500 mhz 30 11 19 0 50 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 30 vdc i dq = 160 ma f = 3500 mhz t c = ?30 c 25 c ?30 c 85 c 10 1 16 15 14 13 12 35 30 25 20 15 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 10 11 17 05 12 13 14 i dq = 160 ma f = 3500 mhz 25 v dd = 28 v 30 v ?10 110 ?40 ?35 ?30 ?25 ?20 17 40 25 c 85 c 15 16 32 v 5 t c = ?30 c ?30 c 85 c 25 c ?60 v dd = 30 vdc, i dq = 160 ma f = 3500 mhz, 802.16d, 64 qam 3 / 4 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf 85 c 25 c ?30 c 85 c 18 45 15 20
8 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 30 vdc, p out = 2 w avg., and d = 17%. mttf calculator available at http:/www.freescale.com/rf. select tools/ software/application software/calculators to access the mttf calcu? lators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8 wimax test signal 10 0.0001 100 0 peak ?to?average (db) figure 13. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal compressed output signal @ 2 w avg. p out 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 7 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 14. wimax spectrum mask specifications ?7.2 point c point c system type g point b point b point d point d
mrf7s38010hr3 MRF7S38010HSR3 9 rf device data freescale semiconductor z o = 50 z load z source f = 3600 mhz f = 3400 mhz f = 3400 mhz f = 3600 mhz v dd = 30 vdc, i dq = 160 ma, p out = 2 w avg. f mhz z source z load 3400 31.79 - j0.13 13.92 - j11.33 3425 32.46 - j3.62 14.61 - j11.40 3450 32.58 - j6.82 15.53 - j11.36 3475 32.29 - j9.43 16.44 - j11.28 3500 31.32 - j11.63 17.25 - j11.07 3525 30.03 - j13.46 18.11 - j10.64 3550 28.76 - j15.19 18.96 - j10.22 3575 27.24 - j16.25 19.60 - j9.68 3600 25.51 - j17.02 20.17 - j8.99 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 package dimensions
mrf7s38010hr3 MRF7S38010HSR3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3
mrf7s38010hr3 MRF7S38010HSR3 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf7s38010hr3 MRF7S38010HSR3 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 aug. 2007 ? initial release of data sheet
mrf7s38010hr3 MRF7S38010HSR3 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s38010h rev. 0, 8/2007

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